(iTers News) – Infineon Technologies AG today introduced its 700W L-Band RF power transistor featuring the highest-in-industry L-Band output power (700W) available for radar systems operating in the 1200 – 1400 MHz frequency range. By lowering part counts, the new device can reduce system cost and improve reliability while maintaining high ruggedness.
Commmunications/High-Power Pulsed Application
Radar systems emit a high-powered electronic pulse within a specific frequency range and detect the return echoes of each pulse to form an image of distant objects. In this demanding application, the transistors used in the power supply of these pulsed systems must be highly efficient and capable of driving a stable signal in all operating conditions.
Infineon’s new power transistor, PTVA127002EV, is well-suited for L-Band radar systems used in air traffic control and weather observation applications. High efficiency corresponds with low heat output, and high ruggedness (ability to withstand 10:1 VSWR load mismatch) further contributes to the advantages of low component count made possible by the 700W output.
Based on the company’s 50V LDMOS power transistor technology, the PTVA127002EV exhibits excellent efficiency; typically 55% across the 1200-1400 MHz band, with a P1dB output power of 700W, 16dB gain and low thermal resistance characteristics when measured with a 300 µS 10% duty cycle pulse.
With the new addition, Infineon now offers a family of RF power transistors for 1200 – 1400 MHz system applications with rated power output of 25W, 50W, 350W and 700W. In addition to ruggedness, common specifications for each device include wide gate source voltage range (-6V to 12V), and integrated electrostatic discharge (ESD) protection.
Engineering samples and an evaluation board are available now.